Stacking integrated circuits containing serializer and deserializer blocks using through silicon via

ABSTRACT

A system comprising a die stack having at least a first die and a second die; one or more Redistribution Layer(s); one or more Through Silicon Via(s); one or more Serial I/O(s); one or more contact pad(s); and a substrate. The die stack is configured to communicate through said one or more Redistribution Layer(s) and said Through Silicon Via(s). The first die and/or said second die is/are configured to communicate through said one or more Redistribution Layer(s) and said Through Silicon Via(s). The one or more Serial I/O(s) is/are configured to communicate through said one or more Redistribution Layer(s) and said Through Silicon Via(s).

This application claims benefit of and is a Continuation of allowedapplication Ser. No. 13/192,217 filed on Jul. 27, 2011 (now U.S. Pat.No. 10,236,275), whereby co-pending/allowed application Ser. No.13/192,217 claims benefit of and is a Continuation of allowedapplication Ser. No. 12/205,875 filed on Sep. 6, 2008 (now U.S. Pat. No.8,014,166). The entire contents of each of the above-identifiedapplications are hereby incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

A Serializer/Deserializer (SER/DES) is a pair of functional blocks[integrated circuits or IC/chip] commonly used in high speedcommunications. These blocks convert data between serial data andparallel interfaces in each direction. Although the term “SER/DES” isgeneric, in speech it is sometimes used as a more pronounceable synonymfor Serial Gigabit Media Independent Interface (SGMII).

SER/DES chips facilitate the transmission of parallel data between twopoints over serial streams, reducing the number of data paths and thus,the number of connecting pins or wires required. Most SER/DES devicesare capable of full duplex operation, meaning that data conversion cantake place in both directions simultaneously. SER/DES chips are used inmany application including Gigabit Ethernet systems, wireless networkrouters, fiber optic communications systems, storage applications justto name a few.

Specifications and speeds vary depending on the needs of the user and onthe application. These blocks are often integrated within anotherIntegrated Circuit (i.e. ASIC).

The quest for “smaller, cheaper, faster” devices is ever increasing. ICpackaging is one area that this quest is continuously challenged. In ICpackaging chips are mounted on and connected to a rigid laminate(substrate) via wirebonds (FIG. 1) or bumps in flip chip (FIG. 2)applications. FIG. 1 illustrates an IC packaging chip having a mold(101) and die attach material (105). In wirebond technology (FIG. 1) thesilicon die (102) is connected via wires (108) to metal layer (106) overa rigid laminate (103). The metal layer (106) is then connected tosolder balls (104) through Via holes (107) inside the rigid laminate(103). In flip chip technology (FIG. 2), the silicon die (201) isconnected to a substrate (203) via balls (202) and the substrate (203)routes the metal to proper solder balls (204).

Packaging SER/DES is a very challenging and specialized area in theworld if IC packaging. With higher data rate flip chips are adapted forpackaging high speed SER/DES because in Flip Chip packaging wirebondsare replaced by conductive solder bumps thereby wirebond inductance isno longer present.

At the present, industry is moving toward 3D packaging where two or moredice are stacked on the top of each other or packages are stacked on thetop of packages. These packaging methods offer high density integrationin smaller footprint making it suitable for applications in which sizematters such as cell phone. FIG. 3 is an example of two equal size chipsplaced vertically in the same package, in which the chips are connectedto the solder balls (305) using wirebond technology. As can be seen fromFIG. 3, a first die (301) is placed above a second dies (302), which inturn is placed above a substrate (306). A spacer (303) is placed betweenthe two dies. Another spacer (304) is placed between the bottom die(302) and the substrate (306). FIG. 4 is another example of 3D chipstacking in which the SER/DES die (404) is not stacked and is positionedas a side die beside the stacked dice (401 and 403). FIG. 4 illustratesa stacked die packaging having spacer (402), die attach material (405and 406), solder balls (407), a rigid laminate (substrate) (408), andvia holes or vias (409).

The drawback of stacked die packaging is the use of wirebond, making itunsuitable for high speed SER/DES packaging. In order to circumvent thisimpediment, this invention proposes to use Through Silicon Via (TSV) toconnect dice vertically.

The benefits of using TSV to connect dice vertically are:

1. Higher degree of miniaturization: By placing TSV within the SER/DESblock one can facilitate the connection of the die above or below thatwould otherwise be placed side by side. In a case where non SER/DES diceare stacked with wirebond and SER/DES die is placed next to it, usingTSV will eliminate all wires.

2. Placing TSV makes it possible to stack two or more dice with SER/DESblock

3. Electrical superiority: When using TSV, it is possible to stack andconnect very high data rate SER/DES blocks vertically without the needfor any wire.

4. Better thermal performance: The TSV placed within the SER/DES blockprovides a highly conductive passage for heat removal from the dieabove.

5. No need for spacer material: Normally, thick Spacer materials areplaced between the dice to make wire-bonding of same or different diesize possible. Using TSV eliminates the need for this material therebyreducing the cost as well as decreasing the overall height of thepackage making it possible to fit the package in places where height isa constraint such as very thin cell phones.

This patent claims the placement of TSV within the SER/DES block toenable high density packaging of dice with SER/DES blocks or any otherblock.

SUMMARY OF THE INVENTION

This invention uses techniques to enable connecting multiple chips(dice) vertically to create a compact 3D chip package. Specifically, ituses techniques that enable high speed SER/DES circuits get connectedbetween multiple dice or from a die to external pins via Through SiliconVia (TSV) that will reduce or eliminate the inductance and capacitanceassociated with otherwise using wirebond. The techniques for stackingmultiple high speed chips enables efficient routing of TSV betweendifferent dice that simplifies 3D chip design and manufacturing byproviding guidelines on positioning and aligning the chips and byproviding guidelines for creating redistribution layer (RDL) and routesthat are resistant to stress.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an example of chip with wirebonded package.

FIG. 2 shows an example of chip with Flip Chip package.

FIG. 3 shows an example of stacked die packing of two chips of the samesize using wirebond.

FIG. 4 shows an example of stacked die packing of two chips with aseparate SER/DES die in the same package using wirebond.

FIG. 5 shows an example of Trough Silicon Via (TSV) on the SER/DESblocks of a chip placed at the peripheries of the chip.

FIG. 6 shows three stacked chips connected to substrate via TSVs.

FIG. 7 shows redistribution layer (Interposer) that is used to route andconnected TSVs and Pads.

FIG. 8 shows two chips with TSVs connected to each other through aredistribution layer (Interposer).

FIG. 9 shows TSVs of one chip connected to the pads of another chipthrough a redistribution layer (Interposer).

FIG. 10 shows the location of test pads at the very edge of dice, whenthey are stacked on each other.

FIG. 11A is a side view of an interposer having formed therein a TSV, inaccordance with one embodiment of the present invention.

FIG. 11B is a side view of an interposer having disposed therein apassive component, in accordance with one embodiment of the presentinvention.

FIG. 11C is a side view of an interposer having a multitude of solderballs disposed on its top surface, in accordance with one embodiment ofthe present invention.

FIG. 11D is a side view of an interposer having an adhesive layer formedon its top surface, in accordance with one embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

To create a more compact and space efficient integrated circuit, it isnecessary to be able to stack multiple dice on top of each other. Twogeneral methods are possible for interconnecting the stacked dice toeach other and for connecting those dice to the pins or solder balls ofthe 3D chip package. One method is to use wirebond, meaning that to usewires to connect chips to each other or to the pins of the 3D package asshown in FIG. 3 and FIG. 4. The wirebond technique is not very usefulfor high speed SER/DES due to creation of inductance and capacitance.

Another technique is to use Through Silicon Via (TSV) to connectmultiple stacked dice to each other or to the external pins. FIG. 8shows an example of TSVs (801, 803) of two dice (802, 804) connected toeach other. While FIG. 9 shows the contact pads (901) of one die (902)is connected to the TSVs (903) of another die (904) using RDLs (906).FIG. 9 illustrates an interposer (substrate) (905). TSVs has so far beenonly used for lower speed integrated circuits. This patent extends theTSV technology for usage with high speed SER/DES circuits. Doing sowould eliminate the need for wirebond and would create a more compactpackage with superior electrical and thermal characteristics.

And, finally, to test dice which are stacked on each other, test padsneed to be created for each die. The test pads must be located at theextreme periphery or edge of dice. FIG. 10 shows two dice (1001, 1003)are stacked on top of each other, They both have TSVs (1005) and thetest pads (1002, 1004) are placed at the edge of these dice.

In order to successfully use TSV for the SER/DES circuits a number ofrules have to be followed. This patent provides the techniques for usingTSV in high speed SER/DES block of chips that could be used forconnecting the SER/DES circuit to external pins.

The first technique is to have the SER/DES blocks that use TSV at one ormore peripheries of the die. FIG. 5 is an example of such method inwhich four SER/DES blocks (501) are used at the four peripheries of thedie (503) and the SER/DES blocks are equipped with TSVs (502) that canbe used to pass through lower dice and get connected to external pins orother dice.

The second technique is to try to limit the SER/DES blocks that use TSVto one or more peripheries of the die and rotate the upper and lowerstacked dice by 90 degrees or have the SER/DES staggered so that theSER/DES blocks of those dice will not block each other. This methodmakes the TSV creation and routing in the interposer layer much easier.

The third technique is to use a redistribution layer (RDL) or interposerwhen TSVs of the lower and upper die can't be aligned to each other.Redistribution layer (RDL) is used to route and connect TSV to “contactpad”. The trace routes can be of any shape, angle or material. Therecould be solder resist on the top of RDL and adhesive such as (BCB),etc. FIG. 6 shows an example in which the TSVs (602, 603, 604 and 605)of 3 stacked dice are aligned to each other and therefore no RDL isrequired. FIG. 6 illustrates three stacked chips connected to asubstrate having a die (601) and an interposer (substrate) (606). WhileFIG. 7 shows an example, in which the TSVs of the two dice (706, 708)are not aligned to each other and therefore an RDL (707) is requiredbetween two dice (706, 708) to route the TSVs. The RDL may contain TSV,blind via, buried via, or any combination of via. The RDL may or may notcontain plans, or passive elements such as capacitors. FIG. 8 showsanother example of a RDL (806) that is used to connect the via (801) ofthe top die (802) to the via (803) of the bottom die (804). FIG. 8illustrates an interposer (substrate) (805).

FIG. 11A is a side view of interposer 707 shown as including a TSV 750,in accordance with one embodiment of the present invention. FIG. 11B isa sideview of interposer 707 shown as including a passive component,such as capacitor 752, in accordance with one embodiment of the presentinvention. FIG. 11C is a sideview of interposer 707 shown as includingsolder balls 754 on its top surface, in accordance with one embodimentof the present invention. FIG. 11D is a sideview of interposer 707 shownas including adhesive layer 756 on its top surface, in accordance withone embodiment of the present invention.

The fourth technique is the method for aligning stacked dice. Dice canbe aligned using fiducials of any type, such as cross, square, circle,+, =, etc, or any text character. Fiducials can be used on theinterposer and/or dice for the purpose of alignment. The interposer anddice can have one, two or as many Fiducials, as needed.

The fifth technique is to create (deposit) contact pads on RDL to createa contact point for the other dice TSV. This pad can of any material,size or shape. A circular contact pad (704) is shown in FIG. 7 thatresides in the RDL (707). The contact pad (704) is used to connect theTSV of the upper layer (708) to the trace (705) on the RDL andsubsequently to the TSV of the lower die (702).

The sixth technique is use tear drops for connecting traces on the RDLto TSVs for the purposes of reinforcement and stress reduction. FIG. 7shows an example of a tear drop (709) on the TSV of the lower die (702).

The seventh technique is mix wirebond and TSV in stacked chips. Wirebondcould be used for low speed digital circuits, while TSV could be usedfor the high speed SER/DES circuits.

The eight technique is to place the test pads for testing a dies thatuses TSV at the extreme periphery of the die.

Any variations of the above are also intended to be covered by theapplication here.

The invention claimed is:
 1. A system comprising: a die stack, whereinsaid die stack includes at least: a first die, and a second die, thesecond die is stacked vertically on top of the first die; one or moreRedistribution Layer(s); one or more Through Silicon Via(s); one or moreSerial I/O(s); one or more contact pad(s); and a substrate, wherein saidsubstrate includes said one or more Redistribution Layer(s) and/or saidone or more Through Silicon Via(s), said first die and/or said seconddie includes said one or more Through Silicon Via(s), said one or moreSerial I/O(s) is/are configured to communicate through said one or moreThrough Silicon Via(s), said one or more Redistribution Layer(s) is/areconfigured to route and connect said Through Silicon Via(s) to said oneor more contact pad(s), said first die and/or said second die comprisessaid one or more Serial I/O(s), said die stack is coupled to saidsubstrate, said first die and/or said second die is/are coupled to saidsubstrate, said die stack is configured to communicate through said oneor more Redistribution Layer(s) and said Through Silicon Via(s), saidfirst die and/or said second die is/are configured to communicatethrough said one or more Redistribution Layer(s) and said ThroughSilicon Via(s), and said one or more Serial I/O(s) is/are configured tocommunicate through said one or more Redistribution Layer(s) and saidThrough Silicon Via(s).
 2. A system comprising: a plurality of dies,wherein said plurality of dies include at least a first die and a seconddie; one or more Redistribution Layer(s); one or more Through SiliconVia(s); one or more Serial I/O(s); and one or more contact pad(s),wherein said one or more die(s) contain(s) said one or more SerialI/O(s), said plurality of dies are formed in a vertical stackconfiguration by being stacked one on top of another, said one or moreThrough Silicon Via(s) is/are placed in said one or more Serial I/O(s),said first die and said second die are stack directly in contact withone another, said first die and said second die are stacked where saidone or more Redistribution Layer(s) are not stacked between them, saidplurality of dies are coupled to said one or more RedistributionLayer(s), said one or more contact pad(s) is/are placed on said one ormore Redistribution Layer(s), said plurality of dies are coupled to saidone or more contact pad(s), and said plurality of dies are coupled tosaid one or more Redistribution Layer(s).